2SC2235 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
2SC2235
NPN Silicon
General Purpose Transistor
FEATURES
Complementary to 2SA965
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
6.0±0.2
TO-92 MOD
4 . 9 ±0. 2
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
VB_CBOB
VB_CEOB
VB_EBOB
I_CB
B
P_CB
B
T_JB
B
TB_stgB
Parameter
Collector-Base Voltage
Collector-Em^B i^B tter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
120
120
5
0.8
0.9
150
-55to+150
Units
V
V
V
A
W
℃
℃
1.0±0.1
0
.
5
0
+0 . 1
–0.1
0 . 4 5 ^+– _00..1¹
(1.50 Typ.)
123
1.
9
+0.1
–0.1
3.0±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
VB_(BR)CBOB IB_CB=1mA,IB_EB=0
120
Collector-emitter breakdown voltage
VB_(BR)CEOB IB_CB=10mA,IB_BB=0
120
Emitter-Base breakdown voltage
VB_(BR)EBOB IB_EB=1mA,IB_CB=0
5
Collector cut-off current
IB_CBOB
VB_CBB=120V,IB_EB=0
Emitter cut-off current
IB_EBOB
VB_EBB=5V,IB_CB=0
DC current gain
h_FE B
B
VB_CEB=5V,IB_CB=100mA
80
Collector-emitter saturation voltage
VB_CEB(sat) IB_CB=500mA,IB_BB=50mA
Base-emitter voltage
V_BE B
B
IB_CB=500mA, VB_CEB=5V
Transition frequency
Collector output capacitance
f_TB
B
Cob
VB_CEB=5V, IB_CB=100mA
VB_CEB=10V,
I =0 _EB
B
f=1MHz
TYP
120
MAX
0.1
0.1
240
1.0
1.0
UNIT
V
V
V
μA
μA
V
V
MHz
30
pF
CLASSIFICATION OF h_FE
Rank
Range
O
80-160
Y
120-240
http://www.SeCoSGmbH.com/
17-May-2007 Rev. A
Any changing of specification will not be informed individual
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