2SC2229_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SC2229
50mA , 200V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Breakdown Voltage
High Transition Frequency
TO-92MOD
A
D
B
K
E
F
C
Collector
2
3
Base
1
Emitter
N
G
H
1 Emitter
2 Collector
M
3 Base
L
J
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.50 6.50
8.00 9.00
12.70 14.50
4.50 5.30
0.35 0.65
0.30 0.51
1.50 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.70 2.05
2.70 3.20
0.85 1.15
1.60 Max
0.00 0.40
4.00 Min
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance, Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
200
150
5
50
800
156
150, -55~150
Unit
V
V
V
mA
mW
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector to Base Breakdown Voltage
V(BR)CBO
200
-
-
V
Collector to Emitter Breakdown Voltage
V(BR)CEO
150
-
-
V
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V
Collector Cut-Off Current
ICBO
-
-
0.1
µA
Emitter Cut-Off Current
IEBO
-
-
0.1
µA
70
-
240
DC Current Gain
hFE
50
-
-
50
-
-
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.5
V
Base to Emitter Saturation Voltage
VBE
-
-
1
V
Transition Frequency
fT
80
-
-
MHz
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=200V, IE=0
VEB=5V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=1mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=30V, IC=10mA
http://www.SeCoSGmbH.com/
12-Dec-2014 Rev. A
Any changes of specification will not be informed individually.
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