 English |
|
|
|
|
|
|
|
| 2SC2216_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor | |||
| |||
|
Elektronische Bauelemente
2SC2216
0.05 A , 50 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ Amplifier dissipation NPN Silicon
TO-92
G
H
J
A
D
B
K
E
CF
ïªBase
ï«Emitter
ï¬Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
ï¬
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
50
45
4
50
300
125, -55~125
ïªï
Base
ï«ï
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut â Off Current
Emitter Cut â Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
50
-
-
V IC=100μA, IE=0
V(BR)CEO
45
-
-
V IC=10mA, IB=0
V(BR)EBO
4
-
-
V IE=100μA, IC=0
ICBO
-
-
0.1
μA VCB=50V, IE=0
IEBO
-
-
0.1
μA VEB=3V, IC=0
hFE
40
-
140
VCE=12.5V, IC=12.5mA
VCE(sat)
-
-
0.2
V IC=15mA, IB=1.5mA
VBE(sat)
-
-
1.5
V IC=15mA, IB=1.5mA
fT
300
-
-
MHz VCE=12.5V, IC=12.5mA
Cob
-
-
2
pF VCB=10V, IE=0, f=30MHz
http://www.SeCoSGmbH.com/
17-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese