2SC2120_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SC2120
0.8 A , 35 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain
Complementary to 2SA950
CLASSIFICATION OF h_FE
Product-Rank 2SC2120-O
Range
100~200
2SC2120-Y
160~320
TO-92
G
H
J
A
D
B
K
E
CF
1Emitter
2Collector
3Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
2
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
35
30
5
0.8
0.6
208
150, -55~150
3
Base
1
Emitter
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Collector Output Capacitance
Transition Frequency
V(BR)CBO
35
-
-
V IC=0.1mA, IE=0
V(BR)CEO
30
-
-
V IC=10mA, IB=0
V(BR)EBO
5
-
-
V IE=0.1mA, IC=0
ICBO
-
-
0.1
µA VCB=35V, IE=0
ICEO
-
-
0.1
µA VCE=25V, IB=0
IEBO
-
-
0.1
µA VEB=5V, IC=0
hFE
100
-
320
VCE=1V, IC=100mA
VCE(sat)
-
-
0.5
V IC=500mA, IB=20mA
VBE
-
-
0.8
V VCE=1V, IC=10mA
Cob
-
-
13
pF VCB=10V, IE=0, f=1MHz
fT
100
-
-
MHz VCE=5V, IC=10mA
http://www.SeCoSGmbH.com/
28-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
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