2SC2120 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
2SC2120
NPN Type
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
FEATURES
MAXIMUM RATINGS* T_A=25 unless otherwise noted
1
2
3
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
35
V
I_C
Collector Current -Continuous
0.8
A
P_CM
Power Dissipation
0.6
W
T_J, T_stg
Junction and Storage Temperature
-55-150
1 23
1. EMITTER
2. COLLECTOR
3 . BASE
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)_CBO
Ic= 0.1mA , I_E=0
35
Collector-emitter breakdown voltage
V(BR)_CEO
I_C= 10 mA , I_B=0
30
Emitter-base breakdown voltage
V(BR)_EBO
I_E=0.1mA, I_C=0
5
Collector cut-off current
I_CBO
V_CB= 35V , I_E=0
0.1
Collector cut-off current
I_CEO
V_CE= 25V , I_B=0
0.1
Emitter cut-off current
I_EBO
V_EB= 5 V, I_C=0
0.1
DC current gain
h_FE
V_CE=1 V, I_C= 100mA 100
320
Collector-emitter saturation voltage
V_CE(sat)
I_C= 500 mA, I_B= 20 mA
0.5
Base-emitter voltage
V_BE
V_CE= 1V, I_C= 10mA
0.8
UNIT
V
V
V
µA
µA
µA
V
V
Transition frequency
f_T
V_CE= 5 V, I_C= 10mA
100
MHz
CLASSIFICATION OF h_FE
Rank
O
Range
100-200
Y
160-320
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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