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| 2SC2001 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors | |||
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Elektronische Bauelemente
2SC2001
0.7 A , 30 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ High hFE and low VCE(sat)
hFE(IC=100mA)ï¼200(Typ)
VCE(sat)(700mA)ï¼0.2V(Typ)
CLASSIFICATION OF hFE
Product-Rank 2SC2001-M
Range
90~180
2SC2001-L
135~270
2SC2001-K
200~400
TO-92
G
H
J
A
D
B
K
E
CF
ïªEmitter
ï«Collector
ï¬Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
ï«ï
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
25
5
0.7
0.6
150, -55~150
ï¬
Base
ïªï
Emitter
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut â Off Current
Collector Cut â Off Current
Emitter Cut â Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Transition Frequency
V(BR)CBO
30
V(BR)CEO
25
V(BR)EBO
5
ICBO
-
ICEO
-
IEBO
-
hFE
90
VCE(sat)
-
VBE(sat)
-
fT
50
-
-
V IC=100μA, IE=0
-
-
V IC=10mA, IB=0
-
-
V IE=100μA, IC=0
-
0.1
μA VCB=30V, IE=0
-
0.1
μA VCE=20V, IB=0
-
0.1
μA VEB=5V, IC=0
-
400
VCE=1V, IC=100mA
-
0.6
V IC=700mA, IB=70mA
-
1.2
V IC=700mA, IB=70mA
-
-
MHz VCE=6V, IC=10mA, f=30MHz
http://www.SeCoSGmbH.com/
17-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
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