2SC1959_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SC1959
0.5 A , 35 V
NPN Plastic Encapsulated Transistor
FEATURES
 Excellent h_FE Linearity
 High Transition Frequency
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
CLASSIFICATION OF h_FE
Product-Rank 2SC1959-O
hFE(1)
Range
hFE(2)
70~140
25 (Min)
2SC1959-Y 2SC1959-GR
120~240
200~400
40 (Min)
-
TO-92
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
MARKING
h_FE Rank
C1923
□ 031
 Emitter
 Collector
 Base
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
35
30
5
500
500
250
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Collector Output Capacitance
Transition Frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
C_ob
f_T
Min.
35
30
5
-
-
70
25
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
7
300
Max.
-
-
-
0.1
0.1
400
-
0.25
1
-
-
Unit
V
V
V
μA
μA
V
V
pF
MHz
Test Conditions
I_C=0.1mA, I_E=0
I_C=1mA, I_B=0
I_E=0.1mA, I_C=0
V_CB=35V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
V_CE=6V, I_C=400mA
I_C=100mA, I_C=10mA
V_CE=1V, I_C=100mA
V_CB=6V, I_E=0, f=1MHz
V_CE=6V, I_C=20mA
http://www.SeCoSGmbH.com/
11-Sep-2012 Rev. D
Any changes of specification will not be informed individually.
Page 1 of 2