2SC1959 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS)

Elektronische Bauelemente
2SC1959
0.5 A , 35 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Excellent h_FE Linearity
 High Transition Frequency
CLASSIFICATION OF h_FE
Product-Rank 2SC1959-O
hFE(1)
Range
hFE(2)
70~140
25Min
2SC1959-Y 2SC1959-GR
120~240
200~400
40Min
-
TO-92
G
H
J
A
D
Emitter
Collector
Base
B
K
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
35
30
5
500
500
250
150, -55~150

Base

Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Collector Output Capacitance
Transition Frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
C_ob
f_T
35
-
-
V I_C=0.1mA, I_E=0
30
-
-
V I_C=1mA, I_B=0
5
-
-
V I_E=0.1mA, I_C=0
-
-
0.1
μA V_CB=35V, I_E=0
-
-
0.1
μA V_EB=5V, I_C=0
70
-
400
V_CE=1V, I_C=100mA
25
-
-
V_CE=6V, I_C=400mA
-
-
0.25
V I_C=100mA, I_B=10mA
-
-
1
V V_CE=1V, I_C=100mA
-
7
-
pF V_CB=6V, I_E=0, f=1MHz
-
300
-
MHz V_CE=6V, I_C=20mA
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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