2SC1923 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
2SC1923
0.02 A , 40 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 General Purpose Switching and Amplification
CLASSIFICATION OF h_FE
Product-Rank 2SC1923-R
Range
40~80
2SC1923-O
70~140
2SC1923-Y
100~200
TO-92
G
H
J
A
D
Emitter
Collector
Base
B
K
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
40
30
4
20
100
1250
150, -55~150

Base

Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Transition Frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
f_T
40
-
-
V I_C=0.1mA, I_E=0
30
-
-
V I_C=1mA, I_B=0
4
-
-
V I_E=0.1mA, I_C=0
-
-
0.5
μA V_CB=18V, I_E=0
-
-
0.5
μA V_EB=4V, I_C=0
40
-
200
V_CE=6V, I_C=1mA
-
550
-
MHz V_CE=6V, I_C=1mA
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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