2SC1906 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial Planar

Elektronische Bauelemente
2SC1906
0.05 A , 30 V
NPN Plastic Encapsulated Transistor
FEATURES
 High Transition Frequency
APPLICATIONS
 VHF Amplifier
 Mixer, Local Oscillator
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
G
K
E
TO-92
H
J
A
D
B
CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
30
19
2
50
300
416
150, -55~150

Base

Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V_(BR)CBO
30
-
-
V I_C=0.01mA, I_E=0
V_(BR)CEO
19
-
-
V I_C=3mA, I_B=0
V_(BR)EBO
2
-
-
V I_E=0.01A, I_C=0
I_CBO
-
-
0.5
μA V_CB=10V, I_E=0
I_EBO
-
-
0.5
μA V_EB=2V, I_C=0
h_FE
40
-
-
V_CE=10V, I_C=10mA
V_CE(sat)
-
-
1
V I_C=20mA, I_B=4mA
f_T
600
-
-
MHz V_CE=10V, I_C=10mA
C_ob
-
-
2
pF V_CB=10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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