2SC1815W Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Transistor Epitaxial Planar Transistor

Elektronische Bauelemente
RoHS Compliant Product
2SC1815W
NPN Transistor
Epitaxial Planar Transistor
Description
The 2SC1815W is designed for use in
driver stage of AF amplifier and general
purpose amplificaion.
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Value
60
50
5
150
225
-55~+150
Units
V
V
V
mA
mW
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Symbol Min Typ. Max Unit Test Conditions
Collector-Base Breakdown Voltage
BVCBO
60
-
-
V IC= 100 µA
Collector-Emitter Breakdown Voltage
BVCEO
50
-
-
V IC= 1mA
Emitter-Base Breakdown Voltage
BVEBO
5
-
-
V IE= 10µA
Collector-Base Cutoff Current
ICBO
-
-
100 nA VCB= 60V
Emitter-Base Cutoff Current
IEBO
-
-
100 nA VEB=5V
Collector Saturation Voltage
Base Saturation Voltage
*VCE(sat)
-
*VBE(sat)
-
-
250 ^mV IC=100mA,IB=10mA
-
1
V IC=100mA,IB=10mA
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
*hFE1
120
-
700
VCE= 6 V, IC=2mA
*hFE2
25
-
-
VCE= 6 V, IC=150mA
fT
80
-
-
MHz VCE= 10V, IC= 1mA,f=100MHz
Cob
-
-
3.5 pF VCB=10V, f=1MHz
Classification of hFE
*Pulse width 380µs, Duty Cycle 2%
Rank
Range
C4Y
120~240
C4G
200~400
C4B
350~700
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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