2SC1623K_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN Epitaxial Planar Transistor

Elektronische Bauelemente
2SC1623K
0.1A , 60V
NPN Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
High DC current gain :h_FE=200(Typ), V_CE=6V, I_C=1mA.
High Voltage:V_CEO=50V.
SOT-23
A
L
3
Top View C B
CLASSIFICATION OF h_FE
1
1
2
Product-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B ^K
E
Range
Marking Code
90~180
L4
135~270
L5
200~400
L6
300~600
L7
F
D
G
H
3
2
J
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
60
50
5
100
200
150, -55 ~ 150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
60
-
-
V IC=100µA, IE=0
50
-
-
V IC=1mA, IB=0
5
-
-
V IE=100µA, IC=0
-
-
0.1
µA VCB=60V, IE=0
-
-
0.1
µA VEB=5V, IC=0
90
200
600
VCE=6V, IC=1mA
-
-
0.3
V IC=100mA, IB=10mA
-
-
1.0
V IC=100mA, IB=10mA
250
-
MHz VCE=6V, IC=10mA
http://www.SeCoSGmbH.com/
28-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
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