2SC1623K Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Epitaxial Planar Transistor

Elektronische Bauelemente
2SC1623K
150 A, 60 V
NPN Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
DESCRIPTION
The 2SC1623K is designed for use in
driver stage of AF amplifier and
general purpose application.
PACKAGE DIMENSIONS
1
Base
3 ^Collector
2
Emitter
A
L
K
3
Top View
BS
1
2
V
G
D
J
C
H
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
T_J, T_STG
Ratings
60
50
5
100
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE_(sat)
*VBE_(sat)1
*h_FE1
fT
Min.
60
50
5
-
-
-
-
90
-
Typ.
-
-
-
-
-
-
-
-
250
Max.
-
-
-
100
100
300
1.0
600
-
CLASSIFICATION OF h_FE1
Rank
P
Range
90 - 180
Marking
L4
Y
135 - 270
L5
Unit
V
V
V
nA
nA
mV
V
MHz
Test Conditions
I_C=100uA
I_C=1mA
I_E=100uA
V_CB=60V
V_EB=5V
I_C=100mA, I_B=10mA
I_C=100mA, I_B=10mA
V_CE=6V, I_C=1mA
V_CE=6V, I_C=10mA
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
G
200 - 400
L6
B
300 - 600
L7
01-June-2002 Rev. A
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