2SC1383L_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon General Purpose Transistor

Elektronische Bauelemente
2SC1383L / 2SC1384L
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Low collector to emitter saturation voltage V_CE(sat).
Complementary pair with 2SA683 and 2SA684.
CLASSIFICATION OF h_FE(1)
Product-Rank 2SC1383L-Q 2SC1383L-R 2SC1383L-S
Product-Rank 2SC1384L-Q 2SC1384L-R 2SC1384L-S
Range
85~170
120~240
170~340
TO-92L
G
H
J
A
D
B
K
E
CF
1Emitter
2Collector
3Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.70 5.10
7.80 8.20
13.80 14.20
3.70 4.10
0.35 0.55
0.35 0.45
1.27 TYP.
1.28 1.58
2.44 2.64
0.60 0.80
Collector
2
3
Base
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
2SC1383L
2SC1384L
2SC1383L
Collector to Emitter Voltage
2SC1384L
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
60
25
50
5
1
1
150, -55~150
1
Emitter
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector to Base Breakdown 2SC1383L
30
-
-
Voltage
V(BR)CBO
V
2SC1384L
60
-
-
Collector to Emitter
2SC1383L
25
-
-
Breakdown Voltage
2SC1384L
V(BR)CEO
50
-
-
V
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V
Collector Cut - Off Current
ICBO
-
-
0.1
µA
DC Current Gain
hFE (1)
85
-
340
hFE (2)
50
-
-
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.4
V
Base – Emitter Saturation Voltage
VBE(sat)
-
-
1.2
V
Transition Frequency
fT
-
200
-
MHz
Test Conditions
IC=10µA, IE=0
IC=2mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VCE=10V, IC=500mA
VCE=5V, IC=1A
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=10V, IC=50mA
http://www.SeCoSGmbH.com/
28-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
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