2SC1383 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

Elektronische Bauelemente
2SC1383/2SC1384
NPN Silicon
General Purpose Transistor
FEATURE
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
6.0±0.2
TO-92 MOD
4 . 9 ±0. 2
Power dissipation
P_CM: 1 W (Tamb=25℃)
Collector current
I_{CM: 1 A}
Collector-base voltage
V_(BR)CBO: 2SC1383: 30 V
2SC1384: 50 V
Operating and storage junction temperature range
T_{J, Tstg: -55℃ to +150℃}
1.0±0.1
0.
5
0
+0 . 1
–0.1
0 . 4 5 ^+– _00..1¹
(1.50 Typ.)
123
1.
9
+0.1
–0.1
3.0±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC1383
2SC1384
2SC1383
2SC1384
Symbol
Test conditions
V(BR)_CBO
Ic= 10µA , I_E=0
V(BR)_CEO
I_C=2mA , I_B=0
V(BR)_EBO
I_E= 10µA, I_C=0
I_CBO
V_CB=20V , I_E=0
h_FE(1)
V_CE=10 V, I_C= 500mA
h_FE(2)
V_CE=5 V, I_C= 1A
V_CE(sat)
I_C= 500m A, I_B=50mA
V_BE(sat) I_C= 500mA , I_B= 50mA
MIN
30
60
25
50
5
85
50
MAX UNIT
V
V
V
0.1
µA
340
0.4
V
1.2
V
Transition frequency
f_T
V_CE= 10 V, I_C= 50mA
100
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
Range
Q
85-170
R
120-240
S
170-340
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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