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| 2SC1359 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification) | |||
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Elektronische Bauelemente
2SC1359
0.03 A , 30 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ Optimum for RF Amplification of FM/AM Radios
ï¬ High Transition Frequency fT
CLASSIFICATION OF hFE
Product-Rank 2SC1359-B
Range
70~140
2SC1359-C
110~220
TO-92
G
H
J
A
D
ïªEmitter
ï«Collector
ï¬Base
B
K
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
ï«ï
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
30
20
5
30
400
312
150, -55~150
ï¬
Base
ïªï
Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut â Off Current
Emitter Cut â Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
V(BR)CBO
30
-
-
V IC=0.1mA, IE=0
V(BR)CEO
20
-
-
V IC=1mA, IB=0
V(BR)EBO
5
-
-
V IE=0.1mA, IC=0
ICBO
-
-
0.1
μA VCB=10V, IE=0
IEBO
-
-
0.1
μA VEB=5V, IC=0
hFE
70
-
220
VCE=10V, IC=1mA
VCE(sat)
-
-
0.2
V IC=15mA, IB=1.5mA
VBE(sat)
-
-
1.2
V IC=15mA, IB=1.5mA
fT
150
-
-
MHz VCE=10V, IC=1mA, f=200MHz
http://www.SeCoSGmbH.com/
21-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1
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