2SC1318 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SC1318
0.5 A, 60 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low Collector to Emitter Saturation Voltage V_CE(sat)
 Complementary Pair with 2SA720
G
H
CLASSIFICATION OF h_FE(1)
Product-Rank 2SC1318-Q 2SC1318-R
Range
85~170
120~240
2SC1318-S
170~340
J
A
D
B
K
E
CF
TO-92
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76

Base
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
60
50
7
0.5
625
200
150, -55~150
Collector


Emitter
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
Min
60
50
7
-
-
85
40
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
200
-
Max
-
-
-
0.1
0.1
340
-
0.6
1.5
-
15
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test condition
I_C= 0.01mA, I_E=0
I_C= 10mA, I_B=0
I_E= 0.01mA, I_C=0
V_CB= 20V, I_E=0
V_EB= 6V, I_C=0
V_CE= 10V, I_C= 0.15A
V_CE= 10V, I_C= 0.5A
I_C= 300mA, I_B= 30mA
I_C= 300mA, I_B= 30mA
V_CE= 10V, I_C= 50mA, f=200MHz
V_CB= 10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
19-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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