2SC1213 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Elektronische Bauelemente
2SC1213 & 2SC1213A
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURE
Low frequency amplifier
Power dissipation
3
P_CM:
0.4 W (Tamb=25℃)
2
Collector current
I_CM:
0.5 A
1
Collector-base voltage
V_(BR)CBO: 2SC1213 :
2SC1213A :
35 V
50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1
23
1. Emitter
2. Collector
3. Base
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage 2SC1213
35
V(BR)CBO
Ic= 10µA , IE=0
V
2SC1213A
50
Collector-emitter breakdown voltage 2SC1213
35
V(BR)CEO
IC= 1 mA , IB=0
V
2SC1213A
50
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
4
V
Collector cut-off current
ICBO
VCB= 20V , IE=0
0.5
µA
DC current gain
hFE(1)
VCE=3V, IC= 10mA
60
320
hFE(2)
VCE=3V, IC= 500mA 10
Collector-emitter saturation voltage
VCE(sat) IC= 150mA, IB= 15 mA
0.2
0.6
V
Base-emitter voltage
VBE
VCE= 3V, IC= 10 mA
0.75
V
CLASSIFICATION OF h_FE(1)
Rank
B
Range
60-120
C
100-200
D
160-320
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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