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2SBA42_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
2SBA42
0.2 A, 310 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
The 2SBA42 is designed for applications as a video output
to drive color CRT, or as a dialer circuit in electronics telephone.
MARKING
SOT-89
4
123
A
E
C
A42
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
13’ inch
1
Base
Collector
24
3
Emitter
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
310
Collector-Emitter Voltage
VCEO
305
Emitter-Base Voltage
VEBO
5
Collector Current -Continuous
IC
0.2
Collector Current -Pulsed
ICM
0.5
Collector Power Dissipation
PD
0.5
Thermal Resistance from Junction to Ambient
RθJA
250
Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
A
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max. Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
310
-
-
V IC=100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO
305
-
-
V IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
V IE=100µA, IC=0
Collector cut-off current
ICBO
-
-
0.25
µA VCB=200V, IE=0
Collector cut-off current
-
ICEO
-
-
0.25
µA VCE=200V, IB=0
-
5
VCE=300V, IB=0
Emitter cut-off current
IEBO
-
-
0.1
µA VEB=5V, IC=0
hFE(1)
60
-
-
VCE=10V, IC=1mA
DC current gain
hFE(2)
100
-
300
VCE=10V, IC=10mA
hFE(3)
75
-
-
VCE=10V, IC=30mA
Collector-emitter saturation voltage VCE(sat)
-
-
0.2
V IC=20mA, IB=2mA
Base-emitter saturation voltage
VBE(sat)
-
-
0.9
V IC=20mA, IB=2mA
Transition frequency
fT
50
-
-
MHz
VCE=20V, IC=10mA,
f=30MHz
http://www.SeCoSGmbH.com/
15-Nov-2012 Rev. A
Any changes of specification will not be informed individually.
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