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| 2SB834_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic-Encapsulated Transistor | |||
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Elektronische Bauelemente
2SB834
-3A , -60V
PNP Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ Power switching applications
CLASSIFICATION OF hFE
Product-Rank
2SB834-O
Range
60~120
2SB834-Y
100~200
ITO-220J
B
N
D
E
MA
H
JC
ï ïªï
Base
Collector
ï«ï
ï¬ï
Emitter
K
G
L
L
F
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
14.80 15.60
9.50 10.50
13.00 REF.
4.30 4.70
2.50 3.20
2.40 2.90
0.30 0.75
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
3.00 4.00
0.90 1.50
0.50 0.90
2.34 2.74
2.50 2.90
ï¦ 3.5 REF.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to case
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJC
TJ, TSTG
-60
-60
-7
-3
1.5
83.3
150, -55~150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut â Off Current
Emitter Cut â Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Turn-on Time
Storage Time
Turn-off Time
Note:
1. Pulse test.
http://www.SeCoSGmbH.com/
04-Mar-2015 Rev. B
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tON
tSTG
tOFF
Min.
-60
-60
-7
-
-
60
20
-
-
5
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
0.7
2
0.9
Max.
-
-
-
-100
-100
200
-
-1
-1
-
-
-
-
Unit
V
V
V
μA
μA
V
V
MHz
Test Condition
IC= -1mA, IE=0
IC= -50mA, IB=0
IE= -1mA, IC=0
VCB= -60V, IE=0
VEB= -7V, IC=0
VCE= -5V, IC= -500mA
VCE= -5V, IC= -3A
IC= -3A, IB= -0.3A
VCE= -5V, IC= -0.5A
VCE= -5V, IC= -500mA, f =1MHz
μs IB1= -IB2= -0.2A, IC=2A, VCC=30V
Any changes of specification will not be informed individually.
Page 1 of 2
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