2SB834 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,60V,30W)

Elektronische Bauelemente
2SB834
-3A , -60V
PNP Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
CLASSIFICATION OF h_FE
Product-Rank
2SB834-O
Range
60~120
2SB834-Y
100~200
ITO-220J
B
N
D
E
MA
H
JC
1
Base
Collector
2
3
Emitter
K
G
L
L
F
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
14.80 15.60
9.50 10.50
13.00 REF.
4.30 4.70
2.50 3.20
2.40 2.90
0.30 0.75
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
3.00 4.00
0.90 1.50
0.50 0.90
2.34 2.74
2.50 2.90
φ 3.5 REF.
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to case
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJC
TJ, TSTG
-60
-60
-7
-3
2
4.16
150, -55~150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
-60
Collector to Emitter Breakdown Voltage V(BR)CEO -60
Emitter to Base Breakdown Voltage
V(BR)EBO
-7
Collector Cut – Off Current
ICBO
-
Emitter Cut – Off Current
IEBO
-
DC Current Gain
60
hFE
20
Collector to Emitter Saturation Voltage
VCE(sat)
-
Base to Emitter Saturation Voltage
VBE(sat)
-
Transition Frequency
fT
5
Turn-on Time
tON
-
Storage Time
tSTG
-
Turn-off Time
tOFF
-
Note:
1. Pulse test.
http://www.SeCoSGmbH.com/
14-Aug-2012 Rev. A
-
-
V IC= -1mA, IE=0
-
-
V IC= -50mA, IB=0
-
-
V IE= -1mA, IC=0
-
-100
µA VCB= -60V, IE=0
-
-100
µA VEB= -7V, IC=0
-
200
VCE= -5V, IC= -500mA
-
-
VCE= -5V, IC= -3A
-
-1
V IC= -3A, IB= -0.3A
-
-1
V VCE= -5V, IC= -0.5A
-
-
MHz VCE= -5V, IC= -500mA, f =1MHz
0.7
-
2
-
µs IB1= -IB2= -0.2A, IC=2A, VCC=30V
0.9
-
Any changes of specification will not be informed individually.
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