2SB772Q Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon Medium Power Transistor

Elektronische Bauelemente
2SB772Q
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
D
D1
A
SOT-89
FEATURES
Power dissipation
P _CM : 500mW˄Tamb=25ć˅
Collector current
ICM ^{: -3 A}
Collector-base voltage





1.BASE
2.COLLECTOR
3.EMITTER
VB(BR)CBO ^{: -40}
V
Operating and storage junction temperature range
TJ^ˈTstg^{: -55ć to +150ć}
b1
b
e
e1
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
C
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise specified˅CLASSIFICATION OF h_FE(1)
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)_CBO Ic=-100­A ˈI_E=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0
-30
V
Emitter-base breakdown voltage
V(BR)_EBO I_E= -100 ­AˈI_C=0
-6
V
Collector cut-off current
I_CBO
V_CB= -40 V , I_E=0
-1 ­A
Collector cut-off current
I_CEO
V_CE=-30 V , I_B=0
-10 ­A
Emitter cut-off current
I_EBO
V_EB=-6V , I_C=0
-1 ­A
DC current gain
h_FE˄₁˅
V_CE= -2V, I_C= -1A
60
400
h_FE˄₂˅
V_CE=-2V, I_C= -100mA
32
Collector-emitter saturation voltage VCE(sat)
I_C=-2A, I_B= -0.2A
-0.5 V
Base-emitter saturation voltage
Transition frequency
V_BE(sat)
I_C=-2A, I_B= -0.2A
V_CE= -5V, I_C=-0.1A
f_T
50
f = 10MHz
-1.5 V
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
R
Range
60-120
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
O
100-200
Y
160-320
GR
200-400
Any changing of specification will not be informed individual
Page 1 of 2