2SB772L Datasheet, PDF (1/3 Pages) Unisonic Technologies – MEDIUM POWER LOW VOLTAGE TRANSISTOR

Elektronische Bauelemente
2SB772L
PNP Type
Epitaxial Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Description
The 2SB772L os designed for using in output stage of
10W amplifier, voltage regulator, DC-DC converter and
relay driver.
5.6±0.2
TO-251
6.6±0.2
5.3±0.2
2.3±0.1
0.5±0.05
7.0±0.2
7.0±0.2
1.2±0.3
0.75±0.15
0.6±0.1
G
2.3REF.
DS
0.5±0.1
MAXIMUM RATINGS* (T_amb =25^oC, unless otherwise specified)
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current (DC)
Collector Current (Pulse)
IB
Base Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
Dimensions in millimeters
Value
-40
-30
-5
-3
-7
-0.6
10
-55~+150
Units
V
V
V
A
A
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICES
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
-
80
55
Max
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit Test Conditions
V IC=-100µA,IE=0
V IC=-1mA,IB=0
V IE=-10µA,IC=0
uA VCB=-30V,IE=0
uA VEB=-3V,IC=0
V IC=- 2 A,IB=-0.2 A
V IC=- 2 A,IB=-0.2 A
VCE=-2 V, IC=-20 mA
VCE=-2 V, IC=-20 mA
MHz VCE=- 5 V, IC=-0.1mA, f=100MHz
pF VCB=-10V, f=1MHz,IE=0
*Pulse test: Pulse width 380µs, Duty Cycle 2%
Classification of hFE
Rank
Range
Q
100~200
R
160~320
S
250~500
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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