2SB772 Datasheet, PDF (1/2 Pages) NEC – PNP SILICON POWER TRANSISTOR

Elektronische Bauelemente
2SB772
PNP Type
Plastic Encapsulate Transistors
Features
* Power Dissipation:
PCM: 625 mW (Tamb=25^oC)
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3.5±0.2
MAXIMUM RATINGS* T_A=25^oC unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
-40
V
V_CEO
Collector-Emitter Voltage
-30
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current –Continuous
-3
A
P_C
Collector Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
0.625
W
150
o_C
-55~150
o_C
0.4 6^{+–00..11}
0.43^{+–00..0078}
(1.27 Typ).
123
1.25^{+–00..22}
2.54±0.1
1: Emitter
2: Collector
3: Base
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)_CBO Ic=-100μA ，I_E=0
-40
Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0
-30
Emitter-base breakdown voltage
V(BR)_EBO
I_E= -100 μA，I_C=0
-6
Collector cut-off current
I_CBO
V_CB= -40 V , I_E=0
Collector cut-off current
I_CEO
V_CE=-30 V , I_B=0
Emitter cut-off current
I_EBO
V_EB=-6V , I_C=0
DC current gain
h_FE（₁）
h_FE（₂）
V_CE= -2V, I_C= -1A
60
V_CE=-2V, I_C= -100mA
32
Collector-emitter saturation voltage VCE(sat)
I_C=-2A, I_B= -0.2A
Base-emitter saturation voltage
V_BE(sat)
I_C=-2A, I_B= -0.2A
Transition frequency
f_T
V_CE= -5V, I_C=-0.1A
50
f = 10MHz
MAX
-1
-10
-1
400
-0.5
-1.5
UNIT
V
V
V
μA
μA
μA
V
V
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
http://www.SeCoSGmbH.com/
01-Jun-2005 Rev. B
Any changing of specification will not be informed individual
Page 1 of 2