2SB766_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
2SB766
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
D
D1
A
SOT-89
FEATURES
Power dissipation
P _CM : 500mW˄Tamb=25ć˅
Collector current
ICM ^{: -1 A}
Collector-base voltage





1.BASE
2.COLLECTOR
3.EMITTER
VB(BR)CBO ^{: -30}
V
Operating and storage junction temperature range
TJ^ˈTstg^{: -55ć to +150ć}
b1
b
e
e1
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise specified˅
C
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Ic=-10PA, IE=0
Ic=-2mA, IB=0
IE=-10PA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-10V, IC=-500mA
VCE=-5V, IC=-1A
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-50mA, f=200MHz
VCB=-10V, IE=0, f=1MHz
-30
V
-25
V
-5
V
-0.1 PA
-0.1 PA
85
340
50
-0.2 -0.4 V
-0.85 -1.2 V
200
MHz
20
30
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
Q
85-170
AQ
R
120-240
AR
S
170-340
AS
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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