2SB766A Datasheet, PDF (1/2 Pages) Unisonic Technologies – LOW FREQUENCY OUTPUT AMPLIFICATION

Elektronische Bauelemente
2SB766A
PNP
Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Large collector power dissipation P_C
 Complementary to 2SD874A
PACKAGE INFORMATION
Weight: 0.05 g (approximately)
MARKING
B
 = hFE ranking
Collector


Base

Emitter
SOT-89
A
C
D
I
H
L
G
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5° TYP.
0.70 REF.
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Ratings
-60
-50
-5
-1
0.5
150, -55~150
Unit
V
V
V
A
W
°C
PNP ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
C_OB
Min.
-60
-50
-5
-
-
85
50
-
-
-
-
Typ.
-
-
-
-
-
-
-
-0.2
-0.85
200
20
Max.
-
-
-
-0.1
-0.1
340
-
-0.4
-1.2
-
30
Unit
V
V
V
A
A
V
V
MHz
pF
Test Conditions
I_C=-10A, I_E=0
I_C= -2mA, I_B=0
I_E=-10A, I_C=0
V_CB=-20V, I_E=0
V_EB=-4 V, I_C=0
V_CE=-10V, I_C= -500mA
V_CE=-5V, I_C= -1000mA
I_C=-500mA, I_B= -50mA
I_C=-500mA, I_B= -50mA
V_CE=-10V, I_C=-50mA, f=200MHz
V_CB=-10V, I_E=0, f=1MHz
CLASSIFICATION OF hFE2
Rank
Range
Marking
Q
85 - 170
BQ
R
120 - 240
BR
S
170 - 340
BS
http://www.SeCoSGmbH.com/
01-June-2006 Rev. A
Any changes of specification will not be informed individually.
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