2SB764L_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
2SB764L
PNP Plastic Encapsulated Transistor
FEATURE
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
● Power dissipation P_CM: 0.9 W (Tamb=25℃)
● Collector current I_CM: -1 A
● Collector-base voltage V_(BR)CBO: -60 V
G
● Operating and storage junction temperature range
T_J, T_STG: -55℃ to +150℃
A
Collector
2
PACKAGING INFORMATION
Weight: 0.3900 g (Approximate)
3
K
Base
E
1
Emitter
TO-92L
H
J
D
1Emitter
2Collector
3Base
B
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.70 5.10
7.80 8.20
13.80 14.20
3.70 4.10
0.35 0.55
0.35 0.45
1.27 TYP.
1.28 1.58
2.44 2.64
0.60 0.80
ELECTRICAL CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Collector-Base Breakdown Voltage
V_(BR)CBO
-60
-
-
Collector-Emitter Breakdown Voltage V_(BR)CEO
-50
-
-
Emitter-Base Breakdown Voltage
V_(BR)EBO
-5
-
-
Collector Cut-off Current
I_CBO
-
-
-1
Emitter Cut-off Current
I_EBO
-
-
-1
DC Current Gain
h_FE(1)
60
h_FE(2)
30
-
320
-
-
Collector-Emitter Saturation Voltage
V_CE(sat)
-
-
-0.7
Base-Emitter Voltage
V_BE
-
-
-1.2
Transition Frequency
f_T
-
150
-
Collector Output Capacitance
C_OB
-
20
-
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
I_C = -10μA, I_E = 0
I_C = -1mA, I_B = 0
I_E = -10μA, I_C = 0
V_CB = -50V, I_E = 0
V_EB = -5V, I_C = 0
V_CE = -2V, I_C = -0.05A
V_CE = -2V, I_C = -1A
I_C = -0.5A, I_B = -0.05A
I_C = -0.5A, I_B = -0.05A
V_CE = -10V, I_C = -0.05A
V_CB = -10V, I_E = 0, f = 1 MHz
CLASSIFICATION OF h_FE(1)
Rank
Range
D
60 - 120
E
100 - 200
F
160 - 320
01-April-2009 Rev. A
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