2SB709A_11 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon General Purpose Transistor

Elektronische Bauelemente
2SB709A
-0.2A , -45V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
For general amplification
Complementary of the 2SD601A
CLASSIFICATION OF h_FE
Product-Rank 2SB709A-Q
Range
160~260
Marking
BQ1
2SB709A-R
210~340
BR1
2SB709A-S
290~460
BS1
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-45
-45
-7
-100
200
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max. Unit
Collector-base breakdown voltage
V(BR)CBO
-45
Collector-emitter breakdown voltage
V(BR)CEO
-45
Emitter-base breakdown voltage
V(BR)EBO
-7
Collector cut-off current
ICBO
-
Emitter cut-off current
ICEO
-
Collector-emitter saturation voltage
VCE(sat)
-
DC current gain
hFE
160
Transition frequency
fT
60
Collector output capacitance
Cob
-
-
-
V
-
-
V
-
-
V
-
-0.1
μA
-
-100
μA
-
-0.5
V
-
460
-
-
MHz
-
2.7
pF
Test Conditions
IC= -10μA, IE=0
IC= -2mA, IB=0
IE= -10μA, IC=0
VCB= -20V, IE=0
VCE= -10V, IB=0
IC= -100mA, IB= -10mA
VCE= -10V, IC= -2mA
VCE= -10V, IC= -1mA, f=200MHz
VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
21-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
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