2SB709A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Elektronische Bauelemente
2SB709A
PNP Silicon
General Purpose Transistor
FEATURES
l _{Power Dissipation}
PCM : 0.2 W (Tamb = 25 oC)
Collector
3
1
Base
2
Emitter
MAXIMUM RATINGS* (TA=25 ^oC)
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
3
Top View
1
2
V
G
BS
C
D
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
J
All Dimension in mm
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-45
V_CEO
Collector-Emitter Voltage
-45
V_EBO
Emitter-Base Voltage
-7
I_C
Collector Current -Continuous
-200
T_J
Junction Temperature
-55~150
T_stg
Storage Temperature
-55~150
*^{These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.}
Unit
V
V
V
mA
o_C
o_C
ELECTRICAL CHARACTERISTICS(Tamb=25^oC unless otherwise specified)
Parameter
Symbol Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V_(BR)CBO IC=-10 µA, IE=0
-45
V
Collector-emitter breakdown voltage
V_(BR)CEO Ic=-2 mA,IB=0
-45
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=-10 µ A,I_C=0
-7
V
Collector-base cut-off current
I_CBO
V_CB=-20V,I_E=0
-0.1
µA
Collector-emitter cut-off current
I_CEO
V_CE=-10V,I_B=0
-100
µA
DC current gain
h_FE
V_CE=-10V, IC=-2mA
160
460
Collector-emitter saturation voltage
V_CE(sat) I_C=-100mA,I_B=-10mA
-0.5
V
Transition frequency
f_T
V_CE=-10V, IC=-1mA, f=200MHz
60
MHz
Collector output capacitance
C_ob
V_CB=-10V,I_E=0,f=1MHz
2.7
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Q
160-260
BQ1
R
210-340
BR1
S
290-460
BS1
Any changing of specification will not be informed individual
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