2SB649 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Elektronische Bauelemente
2SB649/2SB649A
PNP Type
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-126C
FEATURES
8.0±0.2
3.2±0.2
2.0±0.2
Power smplifier applications
11.0±0.2
4.14±0.1
O2.8±0.1
O3.2±0.1
Power dissipation
1.4±0.1
12 3
P_CM : 1 W Tamb=25
Collector current
I_CM : - 1.5 A
Collector-base voltage
V_(BR)CBO : -180 V
Collector-emitter voltage
15.3±0.2
1.27±0.1
0.76±0.1
4.55±0.1
2.28 Typ.
0.5± 0.1
V_CEO
2SB649 : -120 V
2SB649A ^{: -160 V}
Operating and storage junction temperature range
T_J T_stg: -55 to +150
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
V_(BR)CBO Ic=-1mA I_E=0
V_(BR)CEO Ic=-10mA I_B=0
V_(BR)EBO
I_CBO
I_EBO
I_E=-1mA I_c=0
V_CB=- 160 V, I_E=0
V_EB= -4V , I_C =0
2SB649
2SB649A
-180
-120
-160
-5
DC current gain
h_FE(1) *
2SB649
V_CE= -5V, I_C= -150 mA
60
2SB649A 60
h_FE(2) * V_CE=- 5V, I_C = -500mA
30
MAX UNIT
V
V
V
-10
A
-10
A
320
200
Collector-emitter saturation voltage
V_{CE (sat)} * I_C =- 500 mA, I_B=- 50mA
-1
V
Base-emitter voltage
V_BE *
V_CE=- 5V,I_C=-150mA
Transition frequency
f_T
V_CE=-5V,, I_C=- 150 mA
Collector output capacitance
Cob
V_CB=-10 V , I_E=0,f=1MHz
* The 2SB649 and 2SB649A are grouped by h_FE1 as follows.
-1.5
V
140
MHz
27
pF
Rank
2SB649
2SB649A
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
B
60 - 120
60 - 120
C
100 - 200
100 - 200
D
160 - 320
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Any changing of specification will not be informed individual
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