2SB562 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Elektronische Bauelemente
2SB562
0.9 W, -1 A, -25 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Low frequency power amplifier
z Complementary pair with 2SD468
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
T_J, T_STG
Ratings
-25
-20
-5
-1
0.9
+150, -55 ~ +150
Unit
V
V
V
A
W
℃
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
V_BE
h_FE(1)
f_T
Cob
Min.
-25
-20
-5
-
-
-
-
85
-
-
Typ.
-
-
-
-
-
-
-
350
38
Max.
-
-
-
-1
-1
-0.5
-1
240
-
-
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
I_C=-10 μA, I_E = 0
I_C=-1 mA, I_B = 0
I_E=-10 μA, I_C = 0
V_CB=-20 V, I_E = 0
V_EB=-4 V, I_C = 0
I_C=-0.8A, I_B=-0.08A
V_CE=-2V, I_C=-0.5A
V_CE=-2V, I_C=-0.5A
V_CE = -2V, I_C = -0.5 A
V_CB=-10V,I_E=0,f=1MHz
CLASSIFICATION OF h_FE(1)
Rank
B
Range
85 -170
C
120 - 240
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
Any changes of specification will not be informed individually.
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