2SB561 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Elektronische Bauelemente
2SB561
-0.7A , -25V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low Frequency Power Amplifier
CLASSIFICATION OF h_FE
Product-Rank 2SB561-B
Range
85~170
2SB561-C
120~240
TO-92
G
H
J
A
D
B
K
E
CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76

Base
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
-25
-20
-5
-0.7
0.5
250
150, -55~150
Collector


Emitter
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Collector Output Capacitance
Transition Frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE*
V_CE(sat)
V_BE
C_cb
f_T
-25
-
-
V
-20
-
-
V
-5
-
-
V
-
-
-1
μA
-
-
-1
μA
85
-
240
-
-
-0.5
V
-
-
-1
V
-
20
-
pF
-
350
-
MHz
Test condition
I_C= -0.01mA, I_E=0
I_C= -1mA, I_B=0
I_E= -0.01mA, I_C=0
V_CB= -20V, I_E=0
V_EB= -5V, I_C=0
V_CE= -1V, I_C= -0.15A
I_C= -0.5A, I_B= -0.05A
V_CE= -1V, I_C= -0.15A
V_CB = -10V, I_E=0, f=1MHz
V_CE = -1V, I_C = -0.15A
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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