2SB1658 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS

Elektronische Bauelemente
2SB1658
PNP General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
High Current
Amplifier and Switching Applications
TO-126
1Emitter
2Collector
3Base
A
E
F
B
C
N
L
H
M
K
D
J
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector - Base Voltage
VCBO
-30
Collector - Emitter Voltage
VCEO
-30
Emitter - Base Voltage
VEBO
-6
Collector Current -Continuous
IC
-5
Collector Power Dissipation
PC
1
Maximum Junction to Ambient
RθJA
125
Junction, Storage Temperature
TJ, TSTG
150, -55 ~ 150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage
V(BR)CBO
-30
-
-
V
Collector-Emitter Breakdown voltage V(BR)CEO -30
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
-
-
V
Collector Cut-Off Current
ICBO
-
-
-0.1
µA
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA
DC Current Gain
hFE(1)
150
-
600
hFE(2)
50
-
-
VCE(sat)1
-
Collector-Emitter Saturation Voltage
VCE(sat)2
-
-
-0.15
-
-0.25
V
VCE(sat)3
-
-
-0.5
Base-Emitter Saturation Voltage
VBE(sat)
-
-
-1.5
V
Transition frequency
fT
-
95
-
MHz
Collector output capacitance
Cob
-
100
-
pF
Test Conditions
IC= -0.1mA, IE=0
IC= -1mA, IB=0
IC=0, IE= -0.1mA
VCB= -30V, IE= 0
VEB= -6V, IC= 0
VCE= -2V, IC= -1A
VCE= -2V, IC= -4A
IC= -1A, IB = -50mA
IC= -2A, IB = -100mA
IC= -4A, IB = -200mA
IC= -1A, IB = -100mA
VCE= -10V, IC= -50mA
VCB= -10V, IE= 0, f=1MHz
http://www.SeCoSGmbH.com/
30-Sep-2015 Rev. A
Any changes of specification will not be informed individually.
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