2SB1424 Datasheet, PDF (1/2 Pages) Rohm – Low Vce(sat) Transistor (-20V, -3A)

Elektronische Bauelemente
2SB1424
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
D
A suffix of "-C" specifies halogen & lead-free
D1
A



SOT-89

1.BASE _
2.COLLECTOR

3. EMITTER
FEATURES
Power dissipation
P_CM : 600 mW Temp.=25
Collector current
I_CM
: -3 A
Collector-base voltage
V_(BR)CBO : -20
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
b1
b
e
e1
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
C
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V_(BR)CBO Ic=-50 A,I_E=0
-20
Collector-emitter breakdown voltage
V_(BR)CEO Ic=-1mA,I_B=0
-20
Emitter-base breakdown voltage
V_(BR)EBO I_E=-50 A,I_C=0
-6
Collector cut-off current
I_CBO
V_CB=-20V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-5V,I_C=0
DC current gain
h_FE(1) V_CE=-2V,I_C=-100mA
120
Collector-emitter saturation voltage
V_CE(sat) I_C=-2A,I_B=-100mA
Transition frequency
f_T
V_CE=-2V,I_C=-500mA,f=100MHz
240
Collector output capacitance
C_ob
V_CB=-10V,I_E=0,f=1MHz
35
MAX UNIT
V
V
V
-0.1
A
-0.1
A
390
-0.5 V
MHz
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Q
120-270
AEQ
R
180-390
AER
Any changing of specification will not be informed individual
Page 1 of 2