2SB1412 Datasheet, PDF (1/3 Pages) Weitron Technology – PNP EPITAXIAL PLANAR TRANSISTOR

Elektronische Bauelemente
2SB1412
PNP Silicon
Low Frequency Transistor
RoHS Compliant Product
Features
1)Low VCE(sat).
2)Excellent DC current gain characteristics
3)Complements the 2SD2118
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
−30
−20
−6
−5
−10
Unit
V
V
V
A(DC)
A(Pulse) ∗1
2SB1386
Collector power
dissipation
2SB1412
PC
0.5
W
2
W ∗2
1
W
10
W(TC=25°C)
2SB1326
1
W ∗3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm² or larger.
6.6 ^0.2
0.2
5.3 ^0.1
D-Pack
2.3 ^0.1
0.5 ^0.1
0.8 ^0.1
0.3
0.7 ^0.1
2.3
0.6 ^0.1
1.2 ^0.3
1.5Max
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −30
Collector-emitter breakdown voltage BVCEO −20
Emitter-base breakdown voltage
BVEBO −6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current
transfer ratio
2SB1386,2SB1412
hFE
2SB1326
82
120
Transition frequency
fT
−
Output capacitance
∗Measured using pulse current.
Cob
−
Typ.
−
−
−
−
−
−
−
−
120
60
Max.
−
−
−
−0.5
−0.5
−1.0
390
390
−
−
Unit
V
V
V
µA
µA
V
−
−
MHz
pF
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−20V
VEB=−5V
IC/IB=−4A/−0.1A
∗
∗
VCE=−2V, IC=−0.5A
∗
VCE=−6V, IE=50mA, f=30MHz
VCB=−20V, IE=0A, f=1MHz
!Packaging specifications and hFE
Package
Code
Type
Basic ordering
hFE unit (pieces)
2SB1386 PQR
2SB1412 PQR
2SB1326 QR
T100
1000
−
−
Taping
TL
2500
−
−
TV2
2500
−
−
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3