2SB1386 Datasheet, PDF (1/3 Pages) Rohm – Low Frequency Transistor(-20V,-5A)

Elektronische Bauelemente
2SB1386
PNP Silicon
Low Frequency Transistor
RoHS Compliant Product
Features
1)Low VCE(sat).
2)Excellent DC current gain characteristics
3)Complements the 2SD2098
SOT-89
1.BASE

2.COLLECTOR

3.EMITTER




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Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Limits
−30
−20
−6
−5
−10
Unit
V
V
V
A(DC)
A(Pulse) ∗1
Collector power
dissipation
0.5
PC
2
W
W ∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
D
D1
A
b1
b
C
e
e1
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
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Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −30
Collector-emitter breakdown voltage BVCEO −20
Emitter-base breakdown voltage
BVEBO −6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current
transfer ratio
hFE
82
Transition frequency
Output capacitance
∗Measured using pulse current.
fT
−
Cob
−
Typ.
−
−
−
−
−
−
−
120
60
Max.
−
−
−
−0.5
−0.5
−1.0
390
−
−
Unit
Conditions
V IC=−50µA
V IC=−1mA
V IE=−50µA
µA VCB=−20V
µA VEB=−5V
V IC/IB=−4A/−0.1A
∗
− VCE=−2V, IC=−0.5A
∗
MHz
pF
VCE=−6V, IE=50mA, f=30MHz
VCB=−20V, IE=0A, f=1MHz
z K)(YDOXHVDUHFODVVLILHGDVIROORZV
Rank
P
Q
hFE
82~180 120~270
R
180~390
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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