2SB1322A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification)

Elektronische Bauelemente
2SB1322A
-1A , -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Allow Supply with The Radial Taping
CLASSIFICATION OF h_{FE (1)}
Product-Rank 2SB1322A-Q 2SB1322A-R 2SB1322A-S
Range
85~170
120~240
170~340
TO-92
G
H
J
A
D
B
K
E
CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76

Base
Collector


Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
-60
-50
-5
-1
0.625
200
150, -55~150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector-Base Capacitance
Transition Frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_{FE (1)}
h_{FE (2)}
V_CE(sat)
V_BE(sat)
C_cb
f_T
-60
-
-
V
-50
-
-
V
-5
-
-
V
-
-
-0.1
μA
-
-
-0.1
μA
85
-
340
50
-
-
-
-
-0.4
V
-
-
-1.2
V
-
-
30
pF
-
200
-
MHz
Test condition
I_C= -0.01mA, I_E=0
I_C= -2mA, I_B=0
I_E= -0.01mA, I_C=0
V_CB= -20V, I_E=0
V_EB= -5V, I_C=0
V_CE= -10V, I_C= -0.5A
V_CE= -5V, I_C= -1A
I_C= -0.5A, I_B= -0.05A
I_C= -0.5A, I_B= -0.05A
V_CB = -10V, I_E=0, f=1MHz
V_CE = -10V, I_C = -0.05A, f=200MHz
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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