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| 2SB1274 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – 60V/3A Low-Frequency Power Amplifier Applications | |||
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Elektronische Bauelemente
2SB1274
-3A , -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ General Purpose Switching and Amplification.
ï¬ Wide ASO (Adoption of MBIT Process)
ï¬ Low Saturation Voltage.
TO-220J
Collector
ï«ï
ï¬ï
Base
ïªï
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
VCBO
-60
Collector to Emitter Voltage
VCEO
-60
Emitter to Base Voltage
VEBO
-6
Collector Current - Continuous
IC
-3
Collector Power Dissipation
PC
2
Junction, Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-60
-
-
V IC= -1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-60
-
-
V IC= -5mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-6
-
-
V IE= -1mA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
μA VCB= -40V, IE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
μA VEB= -4V, IC=0
DC Current Gain
100
-
200
hFE
20
-
-
VCE= -5V, IC= -500mA
VCE= -5V, IC= -3A
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
-1
V IC= -2A, IB= -200mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
-1
V VCE= -5V, IC= -500mA
Transition Frequency
fT
-
100
-
MHz VCE= -5V, IC= -500mA
Collector output capacitance
Cob
-
60
-
pF VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
25-Jun-2013 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 1
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