2SB1260 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor

Elektronische Bauelemente
2SB1260
-1 A, -80 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High breakdown voltage and high current BV_CEO=-80V, I_C=-1A
Good h_FE linearity
Complements to 2SD1898
SOT-89
4
A
1
B
2
C
3
E
E
C
PACKAGE INFORMATION
Weight: 0.05 g (approximately)
MARKING
ZL
1
Base
Collector
24
3
Emitter
B
D
F
REF.
A
B
C
D
E
F
G
H
J
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89 1.20
K
L
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Ratings
-80
-80
-5
-1
0.5
150, -55~150
Unit
V
V
V
A
W
°C
PNP ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_OB
Min.
-80
-80
-5
-
-
82
-
-
-
Typ.
-
-
-
-
-
-
-
100
25
Max.
-
-
-
-1
-1
390
-0.4
-
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
I_C=-50μA, I_E=0
I_C= -1mA, I_B=0
I_E=-50μA, I_C=0
V_CB=-60V, I_E=0
V_EB=-4 V, I_C=0
V_CE=-3V, I_C= -100mA
I_C=-500mA, I_B= -50mA
V_CE=-5V, I_C=-50mA, f=30MHz
V_CB=-10V, I_E=0, f=1MHz
CLASSIFICATION OF hFE2
Rank
Range
Q
82 - 180
R
120 - 270
S
180 - 390
http://www.SeCoSGmbH.com/
01-July-2007 Rev. A
Any changes of specification will not be informed individually.
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