2SB1218A_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
2SB1218A
-0.1A , -60V
PNP Silicon Epitaxial Paner Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
APPLICATIONS
 General Purpose Amplification
FEATURES
 High DC Current Gain
 Complementary to 2SD1819A
CLASSIFICATION OF h_FE
Product-Rank 2SB1218A-Q
Range
160~260
Marking
BQ1
2SB1218A-R
210~340
BR1
2SB1218A-S
290~460
BS1
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
LeaderSize
7’ inch
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
Collector

MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction & Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
Ratings
-45
-45
-7
-100
150
833
150, -55 ~ 150

Base

Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
Min.
-45
-45
-7
-
-
-
160
-
-
-
Typ.
-
-
-
-
-
-
-
-
80
2.7
Max.
-
-
-
-100
-100
-100
460
-0.5
-
-
Unit
V
V
V
nA
μA
nA
V
MHz
pF
Test Conditions
I_C= -10μA, I_E=0
I_C= -2mA, I_B=0
I_E= -10μA, I_C=0
V_CB= -20V, I_E=0
V_EB= -10V, I_B=0
V_EB= -5V, I_C=0
V_CE= -10V, I_C= -2mA
I_C= -100mA, I_B= -10mA
V_CE= -10V, I_E=1mA, f=200MHz
V_CB= -10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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