2SB1198K Datasheet, PDF (1/2 Pages) Rohm – Low-frequency Transistor(-80V, -0.5A)

Elektronische Bauelemente
2SB1198K
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
FEATURES
3
S
Top View
B
2
1
D
G
Power dissipation
P_CM : 0.2 W
Collector current
C
J
H
K
*
I_CM
: -0.5 A
Collector-base voltage
V_(BR)CBO : -80
V
Operating and storage junction temperature range
3
2
1
COLLECTOR
3
T_J T_stg: -55 to +150
2
BASE
SC-59
Dim Min Max
A
2.70 3.10
B
1.30 1.70
C
1.00 1.30
D
0.35 0.50
G
1.70 2.30
H
0.00 0.10
J
0.10 0.26
K
0.20 0.60
L
1.25 1.65
S
2.25 3.00
All Dimension in mm
1
EMITTER
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V_(BR)CBO Ic=-50 A,I_E=0
-80
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V_(BR)CEO Ic=-2mA,I_B=0
V_(BR)EBO I_E=-50 A,I_C=0
I_CBO
V_CB=-50V,I_E=0
I_EBO
V_EB=-4V,I_C=0
h_FE(1) V_CE=-3V,I_C=-100mA
V_CE(sat) I_C=-500mA,I_B=-50mA
f_T
V_CE=-10V,I_C=-50mA
C_ob
V_CB=-10V,I_E=0,f=1MHz
-80
-5
120
180
11
MAX
-0.5
-0.5
390
-0.5
UNIT
V
V
V
A
A
V
MHz
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Q
120-270
R
180-390
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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