2SB1197K_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Epitaxial Planar Transistor

Elektronische Bauelemente
2SB1197K
-0.8 A, -40 V
PNP Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low V_CE(sat).V_CE(sat)≦-0.5V(I_C / I_B = -0.5A /-50mA)
I_C =-0.8A
MECHANICAL DATA
Case: SC-59,
Weight: 0.008 grams(approx.)
CLASSIFICATION OF h_FE
Product-Rank
2SB1197K-Q
Range
120~270
Marking
AHQ
2SB1197K-R
180~390
AHR
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
SC-59
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
VCBO
VCEO
VEBO
IC
Pc
-40
-32
-5
-800
200
Junction & Storage Temperature
TJ, TSTG
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max. Unit
Collector-base breakdown voltage
BVCBO
-40
-
-
V
Collector-emitter breakdown voltage
BVCEO
-32
-
-
V
Emitter-base breakdown voltage
BVEBO
-5
-
-
V
Collector cut-off current
ICBO
-
-
-0.5
μA
Emitter cut-off current
IEBO
-
-
-0.5
μA
Collector-emitter saturation voltage
VCE(sat)
-
-
-0.5
V
DC current gain
hFE
120
-
390
Transition frequency
fT
50
200
-
MHz
Collector output capacitance
COB
-
12
30
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-20V
VEB= -4V
IC=-500mA, IB=-50mA
VCE=-3V, IC=-100mA
VCE=-5V, IC=-50mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. C
Any changes of specification will not be informed individually.
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