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2SB1188_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistor
Elektronische Bauelemente
2SB1188
-2A, -40V
PNP Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The 2SB1188 is designed for medium poweramplifier applications.
FEATURES
 Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
 RoHS Compliant Product
CLASSIFICATION OF hFE
Product-Rank 2SB1188-P
Range
82~180
Marking
BCP
2SB1188-Q
120~270
BCQ
2SB1188-R
180~390
BCR
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7’ inch
SOT-89
4
123
A
E
C
B
F
G
H
J
D
K
L
1. Base
2. Collector
3. Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89
1.2
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
Ratings
-40
-32
-5
-2
0.5 (2.0*)
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Transition frequency
fT
Output Capacitance
COB
Note:
1. Pulse Test: Pulse Width ≦ 380μs, Duty Cycle≦2%
Min.
-40
-32
-5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-500
-
150
50
Max.
-
-
-
-1
-1
-800
390-
-
-
Unit
V
V
V
μA
μA
mV
MHz
pF
Test Conditions
IC=-50A , IE=0
IC= -1mA, IB=0
IE= -50A, IC=0
VCB= -20V, IE=0
VEB= -4V, IC=0
IC=--2A, IB= -200mA
VCE= -3V, IC= -500mA
VCE= -5V, IC= -500mA, f=30MHz
VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
04-Nov-2014 Rev. E
Any changes of specification will not be informed individually.
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