2SB1188 Datasheet, PDF (1/2 Pages) Rohm – Medium power Transistor(-32V, -2A)

Elektronische Bauelemente
Description
The 2SB1188 is designed for medium power
amplifier applications.
2SB1188
PNP Silicon
Medium Power Transistor
SOT-89
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
Features
* Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
* RoHS Compliant Product
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
*When mounted on a 40x40x0.7mm ceramic board.
Ratings
+150
-55~+150
-40
-32
-5
-2
0.5 (2.0*)
Unit
ć
ć
V
V
V
A
W
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-50uA , IE=0
BVCEO
BVEBO
-32
-
-
V
IC=-1mA, IB=0
-5
-
-
V
IE=-50uA ,IC=0
ICBO
-
-
-1
uA
VCB=-20V, IE=0
IEBO
*VCE(sat)
-
-
-1
uA
VEB=-4V, IC=0
-
-500
-800
mV IC=-2A, IB=-200mA
*hFE
82
-
390
VCE=-3V, IC=-500mA
fT
-
150
-
MHz VCE=-5V, IC=-500mA, f=30MHz
Cob
-
50
-
pF
VCB=-10V, IE=0, f=1MHz
Classification Of hFE
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Rank
P
Q
R
Range
82 ~ 180
120 ~ 270
180 ~ 390
http://www.SeCoSGmbH.com
04-Apr-2007 Rev. C
Any changing of specification will not be informed individual
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