2SB1132_10 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon Medium Power Transistor

Elektronische Bauelemente
2SB1132
-1A, -40V
PNP Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low power dissipation 0.5W
MARKING
1132
Date Code
SOT-89
4
123
A
E
C
CLASSIFICATION OF h_FE
Product Rank 2SB1132-P
Range
82~180
2SB1132-Q
120~270
2SB1132-R
180~390
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
LeaderSize
7’ inch
B
D
FG
H
K
J
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89
1.2
0
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction & Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
-40
-32
-5
-1
500
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
-40
-32
-5
-
-
82
-
-
-
Typ.
-
-
-
-
-
-
-0.2
150
20
Max.
-
-
-
-0.5
-0.5
390
-0.5
-
30
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC= -50µA, IE=0
IC= -1mA, IB=0
IE= -50µA, IC=0
VCB= -20V, IE=0
VEB= -4V, IC=0
VCE= -3V, IC= -100mA
IC= -500mA, IB= -50mA
VCE= -5V, IC= -50mA, f=30MHz
VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
10-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
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