2SB1132 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor

Elektronische Bauelemente
2SB1132
PNP Silicon
Medium Power Transistor
SOT-89
1.BASE

2.COLLECTOR

3.EMITTER

*Features
Low power dissipation 0.5W
RoHS Compliant Product
*Stucture
Epitaxial planar type.
PNP silicon transistor.
D
D1
A
b1
b
C
e
e1
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V_(BR)CBO Ic=-50 A,I_E=0
-40
Collector-emitter breakdown voltage
V_(BR)CEO Ic=-1mA,I_B=0
-32
Emitter-base breakdown voltage
V_(BR)EBO I_E=-50 A,I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-20V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-4V,I_C=0
DC current gain
h_FE(1) V_CE=-3V,I_C=-100mA
82
Collector-emitter saturation voltage
V_CE(sat) I_C=-500mA,I_B=-50mA
Transition frequency
f_T
V_CE=-5V,I_C=-50mA,f=30MHz
150
Collector output capacitance
C_ob
V_CB=-10V,I_E=0,f=1MHz
20
MAX
-0.5
-0.5
390
-0.5
30
UNIT
V
V
V
A
A
V
MHz
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
P
82-180
Q
120-270
R
180-390
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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