2SB1119_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
2SB1119/2SD1619
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
D
D1
A
SOT-89
FEATURES
Power dissipation
P _CM : 500mW˄Tamb=25ć˅
Collector current
ICM ^{: -1 A}
Collector-base voltage





1.BASE
2.COLLECTOR
3.EMITTER
VB(BR)CBO ^{: -25 V}
Operating and storage junction temperature range
TJ^ˈTstg^{: -55ć to +150ć}
b1
b
e
e1
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
C
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise specified˅CLASSIFICATION OF h_FE(1)
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)_CBO Ic=-10­A ˈI_E=0
-25
V
Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0
-25
V
Emitter-base breakdown voltage
V(BR)_EBO I_E= -10 ­AˈI_C=0
-5
V
Collector cut-off current
I_CBO
V_CB= -20 V , I_E=0
-0.1 ­A
Collector cut-off current
I_CEO
V_CE= -20 V , I_B=0
-0.1 ­A
Emitter cut-off current
I_EBO
V_EB=-4V , I_C=0
-0.1 ­A
DC current gain
h_FE˄₁˅
V_CE= -2V, I_C= -50mA
100
560
h_FE˄₂˅
V_CE=-2V, I_C= -1A
40
Collector-emitter saturation voltage VCE(sat)
I_C=-0.5A, I_B= -50mA
-0.7 V
Base-emitter saturation voltage
Transition frequency
V_BE(sat)
f_T
I_C=-0.5A, I_B= -50mA
VCE= -10V, IC=-50mA
-1.2 V
180
MHz
Collector output capacitance
Marking 2SB1119 : BB
2SD1619 : DB
CLASSIFICATION OF hFE₍₁₎
Rank
R
Range
100-200
Cob
VCB=-10V, f = 1MH
25
pF
S
140-280
T
200-400
U
280-560
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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