2SB1116_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
2SB1116
-1A , -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High current surface mount PNP silicon switching transistor
for Load management in portable applications
CLASSIFICATION OF h_FE
Product-Rank 2SB1116-L
Range
135~270
2SB1116-K
200~400
2AB1116-U
300~600
MARKING
1116
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
1
7 inch
Base
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
Collector
3
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
2
Emitter
Ratings
-60
-50
-6
-1
350
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base -emitter voltage
Transition frequency
Collector Output Capacitance
Turn-on time
Storage time
Fall time
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE
fT
Cob
tON
tS
tf
-60
-
-
V IC= -100µA, IE=0
-50
-
-
V IC= -1mA, IB=0
-6
-
-
V IE= -100µA, IC=0
-
-
-0.1
µA VCB= -60V, IE=0
-
-
-0.1
µA VEB= -6V, IC=0
135
-
600
VCE= -2V, IC= -100mA
81
-
-
VCE= -2V, IC= -1A
-
-
-0.3
V IC= -1A, IB = -50mA
-
-
-1.2
V IC= -1A, IB = -50mA
-0.6
-
-0.7
V VCE= -2V, IC= -50mA
70
-
-
MHz VCE= -2V,IC= -100mA
-
25
-
pF VCB= -10V, IE=0, f=1MHz
-
0.07
-
-
0.7
-
-
0.07
-
µS
VCC= -10V,IC= -100mA,
IB1=-IB2= -0.01A, VBE(off)=2~3V
http://www.SeCoSGmbH.com/
27-Aug-2012 Rev. A
Any changes of specification will not be informed individually.
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