2SA965TM_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
2SA965TM
-0.8A , -120V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Complementary to 2SC2235
 Power Amplifier Applications
TO-92MOD
A
D
CLASSIFICATION OF h_FE
Product-Rank 2SA965TM-O
Range
80-160
2SA965TM-Y
120-240
B
K
E
F
C
Collector


Base

Emitter
N
G
H
 Emitter
 Collector
M
 Base
L
J
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.50 6.50
8.00 9.00
12.70 14.50
4.50 5.30
0.35 0.65
0.30 0.51
1.50 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.70 2.05
2.70 3.20
0.85 1.15
1.60 Max
0.00 0.40
4.00 Min
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance, Junction To Ambient
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
Rating
-120
-120
-5
-0.8
0.9
139
150, -55~150
Unit
V
V
V
A
W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
Min.
-120
-120
-5
-
-
80
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
120
-
Max.
-
-
-
-0.1
-0.1
240
-1
-1
-
40
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
I_C= -1mA, I_E=0
I_C= -10mA, I_B=0
I_E= -1mA, I_C=0
V_CB= -120V, I_E=0
V_EB= -5V, I_C=0
V_CE= -5V, I_C= -100mA
I_C= -500mA, I_B= -50mA
V_CE= -5V, I_C= -0.5A
V_CE= -5V, I_C= -100mA
V_CB= -10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
13-Aug-2013 Rev. B
Any changes of specification will not be informed individually.
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