2SA965TM Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – -0.8A , -120V PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
2SA965TM
-0.8A , -120V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Complementary to 2SC2235
Power Amplifier Applications
TO-92MOD
A
D
CLASSIFICATION OF h_FE
Product-Rank
2SA965-O
Range
80-160
2SA965-Y
120-240
B
K
E
F
C
Collector
2
3
Base
1
Emitter
N
G
H
1 Emitter
2 Collector
M
3 Base
L
J
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.50 6.50
8.00 9.00
12.70 14.50
4.50 5.30
0.35 0.65
0.30 0.51
1.50 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.70 2.05
2.70 3.20
0.85 1.15
1.60 Max
0.00 0.40
4.00 Min
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance, Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-120
-120
-5
-0.8
0.9
139
150, -55~150
Unit
V
V
V
A
W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector to Base Breakdown Voltage
V(BR)CBO
-120
-
-
Collector to Emitter Breakdown Voltage V(BR)CEO -120
-
-
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
Collector Cut-Off Current
ICBO
-
-
-0.1
Emitter Cut-Off Current
IEBO
-
-
-0.1
DC Current Gain
hFE
80
-
240
Collector to Emitter Saturation Voltage VCE(sat)
-
-
-1
Base to Emitter Saturation Voltage
VBE
-
-
-1
Transition Frequency
fT
-
120
-
Collector Output Capacitance
Cob
-
-
40
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
IC= -1mA, IE=0
IC= -10mA, IB=0
IE= -1mA, IC=0
VCB= -120V, IE=0
VEB= -5V, IC=0
VCE= -5V, IC= -100mA
IC= -500mA, IB= -50mA
VCE= -5V, IC= -0.5A
VCE= -5V, IC= -100mA
VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
17-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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